Dielectrics in Integrated Circuits

This paper presents details on ultra thin (silicon dioxide and silicon nitride based composite structures) dielectrics that have the potential for meeting future device requirements. The increase in gate leakage current is a major problem for scaled conventional gate oxide in advanced device technology. Approaches to minimize this problems have been reviewed. Various Gate, Interlayer and DRAM dielectrics and their properties have been discussed. Special emphasis has been placed on emerging applications of high and low-k dielectrics that can avoid physical limits imposed by silicon based dielectrics. In addition to process integration and manufacturing related issues, emphasis has also been placed on the fundamental understanding of the defects both at the interfaces as well as in the bulk of ultrathin dielectrics. The demonstration of Ta2O5 as an attractive gate dielectric would provide a paradigm shift for future gate dielectric research.